PMCM440VNE/S500Z

Single FETs, MOSFETs Overview

The PMCM440VNE is a 12 V N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a maximum drain-source voltage of 12 V and a continuous drain current of 5 A at 25 °C. The device exhibits a typical on-state resistance of 57 mΩ at VGS = 4.5 V and ID = 3 A. It incorporates ElectroStatic Discharge protection exceeding 2 kV HBM and operates within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Ultra-small WLCSP4 package dimensions for space-constrained designs
• Trench MOSFET technology for low threshold voltage operation
• Integrated ESD protection exceeding 2 kV Human Body Model rating

Single FETs, MOSFETs Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Ensure that the procurement channel provides valid traceability for the component batch. Confirm RoHS compliance status through the most recent product data sheet revision before finalizing purchase orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring minimal footprint due to its wafer level chip-size package. Evaluate thermal performance based on the specific PCB copper area and mounting pad size, as power dissipation capabilities vary significantly with board layout. Consider the low threshold voltage characteristics when designing gate drive circuits for low-voltage logic interfaces.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of N-channel enhancement mode FETs designed for compact consumer and industrial electronics. It utilizes advanced trench technology to achieve high current density in a miniature form factor. The device is intended for surface-mount assembly on printed circuit boards where space optimization is critical.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameters such as breakdown voltage and on-resistance before substituting.