PMF280UN,115

Single FETs, MOSFETs Overview

The PMF280UN is an N-channel enhancement mode field-effect transistor utilizing μTrenchMOS technology. It operates with a drain-source voltage of 20 V and supports a continuous drain current up to 1.02 A at 25 °C. The device features a low on-state resistance of 340 mΩ at VGS = 4.5 V and a gate-source threshold voltage ranging from 0.45 V to 1 V. Total power dissipation is rated at 0.56 W, with a junction temperature range spanning -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Surface mounted package with a footprint 40% smaller than SOT23
• Low on-state resistance for efficient switching
• Low threshold voltage suitable for low-level drive applications

Single FETs, MOSFETs Applications

• Driver circuits
• Switching in portable appliances

Single FETs, MOSFETs Procurement Notes

Verify the current product status before design finalization, as datasheet information may reflect historical production phases. Confirm that the ordering suffix matches the required packaging configuration. Ensure compatibility with the specified thermal management requirements for the target operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring compact surface-mount solutions with low conduction losses. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient conditions. Verify that the gate drive voltage aligns with the specified threshold and on-resistance performance curves.

Single FETs, MOSFETs Part Context

This device belongs to the N-channel MOSFET category, originally documented under Philips Semiconductors branding. The manufacturer subsequently transitioned to Nexperia B.V., which now manages the product line. The component utilizes TrenchMOS technology to achieve enhanced performance within a small plastic package.

Single FETs, MOSFETs Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters to ensure functional equivalence without modifying existing circuit layouts.