Single FETs, MOSFETs PSMN3R0-30YL,115 product image

PSMN3R0-30YL,115

$1.28
  • Description:MOSFET N-CH 30V 100A LFPAK56
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e951f45a26ab Category: Brand:

  
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PSMN3R0-30YL,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 100A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN3R0-30YL,115

  • Description:MOSFET N-CH 30V 100A LFPAK56
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:45.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2822 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):81W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN3R0-30YL,115

PSMN3R0-30YL,115

Single FETs, MOSFETs Overview

The Nexperia PSMN3R0-30YL,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device exhibits a typical drain-source on-state resistance of 2.19 mΩ at VGS = 10 V and ID = 15 A. Total gate charge is typically 21 nC at VGS = 4.5 V. The component operates within a junction temperature range of -55 °C to 175 °C and provides a total power dissipation of 81 W at 25 °C.

Single FETs, MOSFETs Feature Summary

  • High efficiency achieved through low switching and conduction losses
  • Compatible with logic level gate drive sources

Single FETs, MOSFETs Applications

  • Class-D amplifiers
  • DC-to-DC converters
  • Motor control
  • Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a compact surface-mount package. The low on-state resistance minimizes conduction losses, while the logic level compatibility simplifies gate driver design. Ensure thermal management strategies account for the specified power dissipation limits relative to the mounting base temperature.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PSMN3R0 series of N-channel MOSFETs. It utilizes TrenchMOS technology to deliver enhanced performance in industrial and communications applications. The LFPAK (SOT669) package provides a thermally efficient solution suitable for surface-mount assembly.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

PSMN3R0-30YL,115PSMN3R0-30YL,115
$1.28
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