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PSMN3R0-30YL,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 100A LFPAK56. Review the specifications below when checking this part for your BOM.
The Nexperia PSMN3R0-30YL,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device exhibits a typical drain-source on-state resistance of 2.19 mΩ at VGS = 10 V and ID = 15 A. Total gate charge is typically 21 nC at VGS = 4.5 V. The component operates within a junction temperature range of -55 °C to 175 °C and provides a total power dissipation of 81 W at 25 °C.
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Select this component for applications requiring high current handling in a compact surface-mount package. The low on-state resistance minimizes conduction losses, while the logic level compatibility simplifies gate driver design. Ensure thermal management strategies account for the specified power dissipation limits relative to the mounting base temperature.
This part belongs to the Nexperia PSMN3R0 series of N-channel MOSFETs. It utilizes TrenchMOS technology to deliver enhanced performance in industrial and communications applications. The LFPAK (SOT669) package provides a thermally efficient solution suitable for surface-mount assembly.
Public confirmed substitute part numbers are not available in the provided documentation.
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