Single FETs, MOSFETs PSMN4R3-100PS,127 product image

PSMN4R3-100PS,127

$1.62
  • Description:MOSFET N-CH 100V 120A TO220AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tube

SKU:5f37654ebad5 Category: Brand:

  
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PSMN4R3-100PS,127 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 120A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN4R3-100PS,127

  • Description:MOSFET N-CH 100V 120A TO220AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:4.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:9900 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):338W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for PSMN4R3-100PS,127

PSMN4R3-100PS,127

Single FETs, MOSFETs Overview

The Nexperia PSMN4R3-100PS,127 is a standard level N-channel MOSFET housed in a TO-220AB package. It supports a drain-source voltage of 100 V and delivers a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device features a typical on-state resistance of 4.3 mΩ at 25 °C and 6.6 mΩ at 100 °C. Total gate charge is typically 170 nC. It operates within a junction temperature range of -55 °C to 175 °C and offers a total power dissipation capacity of 338 W under specified conditions.

Single FETs, MOSFETs Feature Summary

  • Optimized for high efficiency through minimized switching and conduction losses
  • Compatible with standard level gate drive sources

Single FETs, MOSFETs Applications

  • DC-to-DC converters
  • Load switching
  • Motor control
  • Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Confirm that the application environment remains within the specified thermal limits and does not exceed absolute maximum ratings. Ensure compatibility with standard gate drive voltages as defined in the datasheet. Validate that the component meets all relevant industrial equipment requirements without automotive qualification assumptions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust N-channel switching with low on-resistance in a through-hole TO-220AB form factor. It is suitable for applications demanding operation up to 175 °C junction temperature. Consider the 120 A current capability relative to the thermal management strategy employed in the final assembly. Ensure the gate drive circuitry aligns with the standard level requirements to fully leverage the device's performance characteristics.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's standard level MOSFET portfolio, designed for industrial, communications, and domestic equipment. It utilizes silicon technology within a plastic single-ended package featuring a heatsink-mounted design. The product is qualified for high-temperature operation, distinguishing it from lower-rated variants in the broader Nexperia lineup.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements to ensure mechanical and electrical compatibility.

PSMN4R3-100PS,127PSMN4R3-100PS,127
$1.62
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