QPA1000

RF Amplifiers Overview

The QPA1000 is a high-power S-band amplifier operating from 2.8 to 3.2 GHz, fabricated on Qorvo's TQGaN25 0.25um GaN-on-SiC process. It delivers 50 W output power with greater than 58% power-added efficiency and 25 dB gain at a 25 V supply. The device features a third-order intercept point of 47 dBm and operates within a temperature range of -40°C to +85°C.

RF Amplifiers Feature Summary

• High-power RF amplification utilizing GaN-on-SiC technology for robust performance
• Wide bandwidth coverage in the S-band frequency range
• High power-added efficiency exceeding 58% for energy conservation
• Compact surface-mount package design for integration

RF Amplifiers Applications

• Base station transmitter modules
• Electronic warfare systems
• Military radar applications

RF Amplifiers Procurement Notes

Verify component authenticity through authorized channels due to limited availability status. Confirm RoHS compliance and specific packaging variants such as waffle pack configurations. Ensure compatibility with thermal management requirements given the high power dissipation characteristics of the GaN technology used in this specific part number.

RF Amplifiers Selection Notes

Select this component for designs requiring high linearity and substantial output power in the S-band spectrum. Evaluate thermal resistance capabilities to maintain operation within the specified -40°C to +85°C junction temperature limits. Consider the 25 V bias requirement when designing the power delivery network for optimal gain and efficiency performance.

RF Amplifiers Part Context

Part of the Qorvo QPA series focusing on high-performance RF solutions. Built on the TQGaN25 process node, it represents advanced GaN-on-SiC manufacturing. This series targets demanding wireless infrastructure and defense electronics where reliability and power density are critical operational parameters.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available.