R5011FNX

Single FETs, MOSFETs Overview

The R5011FNX is an N-channel power MOSFET manufactured by ROHM Semiconductor, designed for high-voltage switching applications. It features a breakdown voltage (VDSS) of 500V and supports a continuous drain current (ID) of 11A at 25°C case temperature. The device utilizes Silicon technology and is housed in a TO-220FM-3 through-hole package. Key electrical characteristics include a maximum gate-source voltage (VGS) of ±20V and an avalanche energy rating (Eas) of 8.1 mJ. It is optimized for low on-resistance to enhance efficiency in power conversion systems.

Single FETs, MOSFETs Feature Summary

• High voltage capability with 500V drain-source breakdown voltage
• Robust current handling with 11A continuous drain current rating
• Designed for through-hole mounting in TO-220FM-3 packages
• Optimized for efficient power switching in industrial applications

Single FETs, MOSFETs Applications

• Industrial motor drives
• Power supply units
• Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'FNX' against the official ROHM datasheet to confirm pinout and thermal specifications. Ensure the component meets RoHS compliance requirements if mandated by your assembly standards. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm that the TO-220FM-3 package dimensions match your PCB footprint constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V N-channel MOSFET with 11A current capacity is required. Consider the TO-220FM-3 package for through-hole assembly needs. Evaluate the thermal resistance and heat dissipation requirements for your specific application environment. Compare the on-resistance and switching speeds against alternative devices to ensure optimal system efficiency and performance under load conditions.

Single FETs, MOSFETs Part Context

The R5011FNX belongs to ROHM's discrete semiconductor portfolio, specifically within their power MOSFET line. These components are engineered for reliability in demanding environments. ROHM focuses on delivering high-efficiency solutions for automotive, industrial, and consumer electronics sectors. This particular device supports power management and switching applications requiring robust voltage and current handling capabilities.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes with identical 500V/11A ratings and TO-220FM-3 packaging. Verify compatibility regarding gate charge and threshold voltage if replacing with different manufacturers. Ensure any alternative maintains similar thermal performance and avalanche energy ratings for safe operation in existing designs.