R6015ANZC8

Single FETs, MOSFETs Overview

The R6015ANZC8 is a silicon N-channel power MOSFET manufactured by ROHM Semiconductor, designed for high-voltage switching applications. It features a Drain-Source Voltage (Vds) of 600 V and a continuous Drain Current (Id) of 15 A. The device exhibits a typical on-resistance (Rds(on)) of 0.23 Ω at a gate drive voltage of 10 V. Key electrical parameters include a total gate charge (Qg) of approximately 50 nC and a maximum power dissipation (Pd) rated at 100 W. The component operates within a temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for 10V gate drive operation to simplify driver circuit design
• Low on-resistance characteristics for efficient power handling
• Fast switching speed capabilities for reduced switching losses
• Enhanced thermal performance with high power dissipation rating

Single FETs, MOSFETs Applications

• Industrial power supply circuits
• Motor control systems
• High-frequency switching converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix C8 against the manufacturer's current datasheet to confirm package type and tape/reel specifications. Confirm RoHS compliance status and check for any lifecycle notices such as NRND or Obsolete status before finalizing procurement plans. Ensure the supplier provides valid traceability documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V N-channel MOSFET with low on-resistance at 10V drive is required. Compare the 0.23 ohm Rds(on) and 50nC gate charge against alternative packages like TO-220FP or TO-3PF variants to match thermal and mechanical constraints. Ensure the application voltage and current ratings remain within the specified 600V and 15A limits.

Single FETs, MOSFETs Part Context

This part belongs to the R6015 series of N-channel Power MOSFETs from ROHM Semiconductor. The series includes various package options such as TO-263S (D2PAK), TO-3PF, and TO-220FP. The R6015ANZC8 specifically utilizes the LPTS (TO-263S) surface-mount package, distinguishing it from through-hole alternatives in the same electrical family.

Single FETs, MOSFETs Replacement Considerations

The R6015KNZ and R6015KNX are listed as similar level replacements with the same pinout and package specifications. Verify that these substitutes meet the exact 10V drive requirements and thermal dissipation needs of the original design.