R8010ANX

Single FETs, MOSFETs Overview

The R8010ANX is a 10V drive N-channel MOSFET manufactured by ROHM Semiconductor. It features an 800V drain-source voltage and a continuous drain current of 10A. The typical on-resistance at 10V gate drive is 0.43 ohms, with a power dissipation rating of 40W. Total gate charge is typically 62nC. The device is housed in a TO-220FM package with dimensions of 15.1x10.1mm and a thickness of 4.8mm. It supports a storage temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high-efficiency switching applications through optimized gate drive characteristics.
• Robust thermal performance enabled by the TO-220FM leaded package construction.

Single FETs, MOSFETs Applications

• Power Supply

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official ROHM documentation before integration. Confirm that the procurement channel provides traceable supply chain records. Ensure the received units match the specified TO-220FM package and marking codes. Check for physical damage or contamination prior to mounting. Validate compliance with RoHS directives as stated in the product specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 800V blocking capability with moderate current handling. The 10V drive requirement dictates compatible gate driver selection. Consider the 40W power dissipation limit when designing thermal management solutions. Evaluate the TO-220FM footprint constraints within the target enclosure. Note that this part is not recommended for new designs.

Single FETs, MOSFETs Part Context

The R8010ANX belongs to ROHM's portfolio of discrete power semiconductors intended for industrial and consumer electronics. It serves as a legacy component for existing manufacturing lines. The device utilizes silicon technology for reliable operation in standard power conversion topologies. Its discontinuation status indicates a transition toward newer generation products.

Single FETs, MOSFETs Replacement Considerations

The R8009KNXC7G is a confirmed substitute offering the same pinout and package. Verify electrical parameter differences, specifically the lower gate charge and higher power dissipation of the replacement. Ensure the alternative meets all system requirements before implementation.