RF1S22N10SM

Single FETs, MOSFETs Overview

The RF1S22N10SM is a single N-channel silicon power MOSFET manufactured by Harris Corporation. It is housed in a TO-263AB surface-mount package and operates in enhancement mode. The device features a drain-source breakdown voltage of 100 V, a continuous drain current rating of 22 A, and a maximum on-resistance of 0.08 ohms.

Single FETs, MOSFETs Feature Summary

• Single-element N-channel silicon construction
• Surface-mount TO-263AB small outline package
• Enhancement mode operation

Single FETs, MOSFETs Applications

• Power switching circuits
• DC-DC converter topologies
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as this component designation appears across multiple vendors including Fairchild and Renesas. Confirm that the specific unit received matches the Harris Corporation datasheet specifications for the 0.08 ohm resistance value. Ensure the TO-263AB package dimensions align with your board layout requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rated N-channel MOSFET with a 22 A current capacity is required. The low on-resistance makes it suitable for efficient power conversion. Verify thermal management capabilities are adequate for the intended load conditions given the package type.

Single FETs, MOSFETs Part Context

This part belongs to the RF1S series of power field-effect transistors produced by Harris Corporation. The series includes various voltage and current ratings within the same TO-263AB form factor. Harris was a significant provider of discrete power semiconductors before industry consolidations involving Intersil and Renesas.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with RF1S22N10SM units from Fairchild or Renesas if sourcing from alternative distributors. Verify pinout compatibility and electrical parameters match exactly before substitution.