RFM3N45

Single FETs, MOSFETs Overview

The RFM3N45 is an N-channel power MOSFET manufactured by Harris Corporation. It features a maximum drain-source voltage (Vdss) of 450 V and a continuous drain current (Id) of 3 A at case temperature. The device has a maximum on-resistance (Rds(on)) of 3 Ohms at 1.5 A and 10 V gate-source voltage, with a threshold voltage (Vgs(th)) of 4 V at 1 mA. It is housed in a TO-3 through-hole package and supports a power dissipation of 75 W at case temperature. The operating junction temperature range is -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 450 V drain-source breakdown
• Robust thermal performance supporting 75 W power dissipation
• Hermetic metal TO-3 package for harsh environments

Single FETs, MOSFETs Applications

• High-voltage switching circuits
• Power amplification stages
• Industrial control systems requiring radiation hardening

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer lot and revision level upon procurement, as Harris Corporation semiconductor assets have undergone corporate transitions. Confirm RoHS compliance status, as historical data indicates non-compliance. Ensure the TO-3 package pinout matches the target circuit design, specifically checking that the case connection corresponds to the drain terminal. Request full datasheets from authorized distributors to validate electrical parameters against original specifications.

Single FETs, MOSFETs Selection Notes

Select the RFM3N45 for applications requiring high voltage isolation and moderate current handling in rugged environments. The TO-3 metal package provides superior heat dissipation compared to plastic alternatives. Consider the 3 Ohm on-resistance when calculating conduction losses at 1.5 A drive conditions. The device is suitable for designs where hermetic sealing is mandatory for reliability under extreme thermal or radiation stress.

Single FETs, MOSFETs Part Context

This component belongs to the Harris Corporation discrete semiconductor portfolio, specifically within the N-channel MOSFET category. Harris was a significant producer of high-reliability electronics before its semiconductor division was acquired by L3Harris Technologies. The RFM3N45 represents legacy high-voltage technology designed for industrial and military-grade applications requiring robust performance.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements by matching the TO-3 package, 450 V rating, and N-channel configuration. Consult L3Harris technical support for modern equivalents if legacy supply is constrained.