Single FETs, MOSFETs RFP30N06LE product image

RFP30N06LE

  • Description:MOSFET N-CH 60V 30A TO220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:33d55735ea4f Category: Brand:

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RFP30N06LE is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 30A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RFP30N06LE

  • Description:MOSFET N-CH 60V 30A TO220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:47mOhm @ 30A, 5V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
  • Vgs (Max):+10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):96W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for RFP30N06LE

RFP30N06LE

Single FETs, MOSFETs Overview

The RFP30N06LE is a logic level N-Channel power MOSFET manufactured using the MegaFET process. It features a 60V drain-to-source voltage rating and a continuous drain current of 30A. The device has a maximum on-resistance of 0.047Ω at VGS=5V. It includes integrated ESD protection rated at 2kV (Human Body Model). The component operates within a junction temperature range of -55°C to 175°C and utilizes a TO-220AB package.

Single FETs, MOSFETs Feature Summary

  • Logic Level Operation
  • ESD Protection
  • MegaFET Process

Single FETs, MOSFETs Applications

  • Switching Regulators
  • Switching Converters
  • Motor Drivers
  • Relay Drivers

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as this part number was originally developed by Fairchild Semiconductor and is now produced by multiple entities including Renesas and onsemi. Confirm that the specific revision matches the required datasheet specifications for your design. Ensure the TO-220AB package variant is selected correctly for your thermal and mechanical requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a low gate drive voltage is available, as it is optimized for direct integration with standard logic ICs. Consider the thermal resistance characteristics and the need for adequate heat sinking given the 30A current capability. Verify that the 60V breakdown voltage aligns with the system's maximum operating voltages.

Single FETs, MOSFETs Part Context

This component belongs to the family of N-Channel Power MOSFETs designed for high-efficiency switching applications. It represents an evolution from earlier developmental types like the TA49027. The MegaFET technology allows for compact silicon utilization while maintaining robust performance in power management circuits.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with RF1S30N06LESM for surface mount alternatives. Check compatibility with other manufacturers' equivalents such as those from Renesas or onsemi, ensuring pinout and electrical parameters match exactly.

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