— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:ABU / MOSFET
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:-
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:3.5V ~ 12V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):10A
- Rds On (Typ):29mOhm
- Input Type:Non-Inverting
- Features:Latch Function
- Fault Protection:Current Limiting (Fixed), Over Temperature
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOP
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Grade:Automotive
- Qualification:AEC-Q101
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Overview
The RJF0412JSP-00#J0 is an N-channel Thermal FET from Renesas Electronics, housed in a SOP-8 package. It features a maximum drain-source voltage (VDSS) of 40V and a continuous drain current (ID) of 10A. The device exhibits a maximum on-resistance (RDS(ON)) of 37mΩ at 10V gate drive. It supports logic level operation and includes built-in over-temperature shut-down and current limitation circuits. The component is AEC-Q101 compliant for automotive qualification.
Feature Summary
- Integrated over-temperature shut-down circuit that monitors junction temperature to protect against excessive power consumption or over-current conditions.
- Latch-type shutdown operation requiring zero voltage recovery to reset the protection state after a fault event.
- Built-in current limitation circuit providing high endurance capability against short-circuit events.
Applications
- General USB PD applications
- Laboratory power supplies and monitors
- Portable power banks with voltage up to 48V
- Smart robot vacuums
Procurement Notes
Verify the specific suffix #J0 against official Renesas documentation to confirm exact ordering details. Ensure the design accounts for the latch-type shutdown behavior which requires zero voltage recovery. Confirm AEC-Q101 compliance requirements match the target application's automotive standards. Check for any recommended mounting pad layouts provided in official guidelines to optimize thermal performance and density.
Selection Notes
Select this component for designs requiring integrated thermal protection without external monitoring circuits. The logic level gate drive simplifies control interface requirements. Consider the 37mΩ on-resistance for efficiency calculations at 10A load. The SOP-8 package offers high-density mounting options suitable for compact portable devices and automotive modules.
Part Context
This part belongs to the Renesas Thermal FETs series, designed for power switching applications with enhanced safety features. It integrates protection mechanisms directly into the gate area, distinguishing it from standard MOSFETs. The product line targets automotive and industrial sectors where reliability under fault conditions is critical.
Replacement Considerations
Consult official Renesas cross-reference documents for verified substitutes. No public substitute part numbers are confirmed in the provided source material.
FAQ
How does the over-temperature shut-down circuit operate?
The circuit senses the junction temperature and shuts down the gate voltage if temperatures exceed safe limits due to over-power or over-current.
What is required to recover from a latch-type shutdown?
Recovery requires applying zero voltage to the device; the latch type operation prevents automatic restart until the power cycle is removed.
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