RJK2017DPP-90#T2

Single FETs, MOSFETs Overview

The RJK2017DPP-90#T2 is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a TO-220FN package and is designed for high-speed power switching applications. The device operates with a maximum drain-source voltage of 200V and a gate-source voltage limit of 30V. Key electrical parameters include a maximum on-resistance of 47mΩ at 10V gate drive, a typical total gate charge of 66nC, and a power dissipation rating of 30W. It is qualified for industrial temperature ranges.

Single FETs, MOSFETs Feature Summary

• N-channel silicon construction optimized for high-speed power switching
• Industrial qualification level ensuring reliability in demanding environments
• Low on-resistance characteristics for efficient power conduction

Single FETs, MOSFETs Applications

• High-speed power switching circuits
• Industrial power management systems
• General-purpose power control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix (#T2) against official Renesas documentation to confirm tape-and-reel packaging status, as some variants may differ. Confirm the exact on-resistance value (47mΩ) matches your design requirements. Ensure the TO-220FN footprint aligns with your PCB layout. Check for any obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 200V N-channel MOSFET with low gate charge is required for industrial applications. The 47mΩ on-resistance at 10V VGS offers a balance between conduction loss and switching speed. Consider the TO-220FN package for through-hole mounting or board-level thermal management needs. Verify that the 30W power dissipation rating suits your thermal design constraints under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to Renesas' discrete power MOSFET portfolio, distinct from their microprocessor and MPU lines. It serves as a fundamental building block for power electronics, providing robust switching capabilities. The RJK2017 series typically includes variants with different resistance values, such as the RJK2017DPP-00#T2, allowing designers to choose based on specific current and efficiency requirements.

Single FETs, MOSFETs Replacement Considerations

The RJK2017DPP-00#T2 is a related variant within the same series, offering similar specifications but potentially different on-resistance characteristics. Verify pin compatibility and thermal performance before substitution. No other direct public substitutes are confirmed in the provided data.