RP1H065SPTR

$0.59

Description：MOSFET P-CH 45V 6.5A MPT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)

SKU:8ad6875d8379 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RP1H065SPTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET P-CH 45V 6.5A MPT6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RP1H065SPTR

Description：MOSFET P-CH 45V 6.5A MPT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：45 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：31mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MPT6
Package / Case：6-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for RP1H065SPTR

RP1H065SPTR

Single FETs, MOSFETs Overview

The RP1H065SP is a silicon P-channel MOSFET designed for switching applications. It features a low on-resistance and includes a built-in gate-source protection diode. The device is housed in a small surface-mount MPT6 package. Key electrical parameters include a drain-source voltage of -45 V, continuous drain current of ±6.5 A, and pulsed drain current of ±26 A. The gate threshold voltage ranges from -1.0 V to -3.0 V. Power dissipation is rated at 2.0 W with a thermal resistance of 62.5 °C/W.

Single FETs, MOSFETs Feature Summary

Low on-resistance
Built-in G-S Protection Diode
Small Surface Mount Package (MPT6)

Single FETs, MOSFETs Applications

Switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR against the manufacturer's official documentation to confirm packaging details. Confirm that the MPT6 package dimensions align with your PCB layout requirements. Ensure compatibility with the specified absolute maximum ratings during system design validation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a P-channel MOSFET with a -45 V rating and high current handling capabilities up to 6.5 A continuous. Consider the MPT6 package size for space-constrained designs. Verify that the drive voltage meets the gate threshold specifications for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to ROHM Semiconductor's discrete power transistor lineup. It is specifically engineered as a 4V drive P-channel MOSFET. The product utilizes silicon technology and is intended for general-purpose switching tasks within electronic circuits.