RXH125N03TB1

Single FETs, MOSFETs Overview

The RXH125N03TB1 is an N-channel power MOSFET manufactured by ROHM Semiconductor, designed for switching applications in low-power mobile devices. It features a SOP-8 surface-mount package and operates with a drain-source voltage of 30V and a continuous drain current of 12.5A. The device utilizes micro-processing technology to achieve a typical on-resistance of 7.6 milliohms at a gate drive voltage of 4V, ensuring efficient performance. With a total gate charge of 17nC and a power dissipation rating of 2W, it supports fast switching speeds within a compact form factor.

Single FETs, MOSFETs Feature Summary

• Utilizes micro-processing technology to achieve ultra-low on-resistance suitable for low-power consumption applications
• Features a small-size surface-mount SOP-8 package for compact circuit board integration
• Designed as a 4V drive type N-channel MOSFET with fast switching capabilities

Single FETs, MOSFETs Applications

• Switching circuits in mobile electronic devices
• Low-power consumer electronics requiring efficient power management
• General purpose switching applications compatible with 4V logic levels

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TB1 against official ROHM documentation to confirm package dimensions and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the component meets the required operating temperature range for the intended application environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with high current capacity is required in a compact SOP-8 package. It is suitable for designs prioritizing low on-resistance at 4V gate drive voltages. Consider thermal management requirements due to the 2W power dissipation limit in this small footprint. Verify compatibility with existing PCB footprints and assembly processes.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's lineup of N-channel MOSFETs utilizing micro-processing technology for mobile devices. It serves as a higher-current alternative within the 30V series, offering improved performance over lower-amperage variants while maintaining the same compact SOP-8 package style. The product line focuses on balancing low conduction losses with fast switching speeds for portable electronics.

Single FETs, MOSFETs Replacement Considerations

The RXH090N03TB1 is documented as a similar level replacement with comparable specifications and package. Verify electrical parameter differences, particularly regarding drain current and on-resistance, to ensure suitability for the specific design requirements.