S26HS01GTFPBHB033

Memory IC Overview

The S26HS01GTFPBHB033 is a 1 Gbit SEMPER NOR Flash memory device manufactured by Infineon Technologies. It utilizes the HYPERBUS interface for high-speed data transfer and operates within a voltage range of 1.7 V to 2 V, with a nominal voltage of 1.8 V. The component supports DDR operation at an interface frequency of 200 MHz, achieving a maximum bandwidth of 400 MByte/s. It is housed in a PG-BGA-24 package and is qualified for industrial applications, functioning reliably across a temperature range of -40 °C to 85 °C.

Memory IC Feature Summary

• Supports HYPERBUS interface for high-performance data access
• Integrated error correction code for data integrity
• Qualified for industrial operating temperatures

Memory IC Applications

• Industrial control systems
• Automotive domain controllers
• Smart infrastructure endpoints

Memory IC Procurement Notes

Verify the specific ordering suffix against the official Infineon datasheet to ensure correct package and qualification levels. Confirm that the required density and interface specifications align with the system design requirements before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a 1 Gbit capacity is required alongside high-speed HYPERBUS connectivity. Ensure the host controller supports the specified 1.8 V supply voltage and DDR signaling rates. Verify that the industrial temperature range meets the environmental constraints of the target deployment scenario.

Memory IC Part Context

This part belongs to the Infineon SEMPER HS-T family of NOR flash memories. These devices are engineered for functional safety compliance and offer robust endurance characteristics suitable for demanding embedded applications requiring reliable non-volatile storage.

Memory IC Replacement Considerations

Consult official Infineon documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without confirming electrical compatibility and pinout alignment.