S29WS064RABBHW000

Memory IC Overview

The Infineon S29WS064RABBHW000 is a 64 Mbit (4M x 16-bit) MirrorBit Flash memory device operating on a single 1.8 V supply. It features simultaneous read/write capabilities with zero latency across four banks, supporting burst frequencies up to 108 MHz. The device utilizes 65 nm process technology and includes VersatileIO control for flexible I/O voltage levels. It offers asynchronous page mode access and supports top or bottom boot sector configurations within an 84-ball FBGA package.

Memory IC Feature Summary

• Simultaneous Read/Write Architecture: Enables continuous reading from one bank while executing program or erase operations in another bank with zero latency.
• VersatileIO Control: Allows the host system to define data output voltages and input voltage tolerances via the VIO pin, ensuring compatibility with various logic levels.
• Advanced Sector Protection: Provides hardware and dynamic protection methods, including low VCC write inhibit and command-enabled locking of individual sectors.
• Secured Silicon Sector: Includes a 256-word region accessible via command sequences for storing factory and customer secured information.

Memory IC Applications

• High-performance embedded systems requiring large storage arrays
• Automotive platforms demanding reliable non-volatile memory
• Industrial networking equipment needing simultaneous operation capabilities
• Consumer devices utilizing burst mode flash for efficient data access

Memory IC Procurement Notes

Verify the specific ordering suffixes against the manufacturer's current valid combinations list, as availability may vary by region and production cycle. Confirm temperature range specifications, particularly if industrial grade (-40°C to +85°C) is required instead of the standard wireless range. Ensure compliance with RoHS and halogen-free material requirements specified for the FBGA package variant.

Memory IC Selection Notes

Select this component when simultaneous read/write operations are critical to system performance, allowing background programming without halting execution. Consider the 1.8 V-only power requirement and VersatileIO flexibility for interface compatibility. Evaluate the sector architecture needs, specifically choosing between top or bottom boot configurations based on firmware placement strategies.

Memory IC Part Context

This part belongs to the S29WS series of 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory. It is manufactured using 65 nm MirrorBit technology, succeeding earlier generations like the S29GL series which utilized different process nodes. The device maintains compatibility with JEDEC standards and is part of the broader portfolio originally developed by Spansion and now continued by Infineon Technologies.

Memory IC Replacement Considerations

Direct replacements must match the 64 Mbit density, 16-bit width, and 1.8 V supply voltage. Verify that alternative parts support simultaneous read/write operations and similar sector architectures. Check for compatible packaging, such as the 84-ball FBGA, and ensure temperature ranges align with application requirements.