SCS220KE2HRC11

Diode Arrays Overview

The SCS220KE2HRC11 is a second-generation silicon carbide (SiC) Schottky barrier diode manufactured by ROHM Semiconductor. Designed for automotive applications, it complies with the AEC-Q101 qualification standard. The device utilizes a TO-247N-3 through-hole package and features a dual configuration. Key electrical specifications include a maximum repetitive reverse voltage of 1.2 kV and a continuous forward current rating of 20 A. It exhibits a typical forward voltage of 1.6 V at rated conditions and supports a maximum junction temperature of +175°C. The component handles an 84 A forward surge current with a power dissipation capacity of 270 W.

Diode Arrays Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards
• High-speed switching capability with reduced recovery time
• Low temperature dependence for stable performance
• Silicon carbide construction for high breakdown voltage

Diode Arrays Applications

• Automotive power conversion systems
• High-voltage DC/DC converters
• On-board charger circuits
• Inverter modules requiring high thermal stability

Diode Arrays Procurement Notes

Verify the specific ordering suffix to ensure correct packaging and grade alignment. Confirm that the procurement channel provides original manufacturer documentation. Check for RoHS compliance status as indicated in official datasheets. Ensure the received components match the TO-247N-3 physical dimensions. Validate the AEC-Q101 certification status for automotive integration requirements.

Diode Arrays Selection Notes

Select this component when designing circuits requiring 1.2 kV blocking capability in a through-hole format. Consider the 20 A continuous current rating for load matching. Evaluate the 1.6 V forward voltage drop against system efficiency targets. Verify compatibility with existing PCB footprints for the TO-247N-3 package. Assess thermal management solutions suitable for 270 W power dissipation.

Diode Arrays Part Context

This part belongs to ROHM's second-generation SiC Schottky diode family. It shares the TO-247N-3 form factor with other automotive-grade devices like the SCT series MOSFETs. The product line emphasizes high reliability for electric vehicle and industrial power electronics. It complements ROHM's broader portfolio of wide-bandgap semiconductor solutions.

Diode Arrays Replacement Considerations

The SCS220KE2HR is listed as an alias for this component. Verify pinout and electrical parameters before substituting with other 1.2 kV SiC diodes. Ensure any alternative maintains AEC-Q101 qualification if used in automotive contexts.