SFW9Z24TM

Single FETs, MOSFETs Overview

The SFW9Z24TM is a P-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor using planar stripe and DMOS technology. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 9.7 A at case temperature or 2.5 A at ambient conditions. The device exhibits a maximum on-resistance of 2.4 Ω and operates within a junction temperature range of -55°C to 175°C. Packaged in a surface-mount TO-252 (DPAK) format, it is designed for efficient power switching applications requiring robust performance.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe and DMOS technology for enhanced electrical characteristics
• Features avalanche rugged technology and rugged gate oxide design
• Provides extended safe operating area with lower leakage current and input capacitance

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Fairchild Semiconductor, now part of ON Semiconductor, to ensure component authenticity. Confirm the package type matches the specified TO-252 (DPAK) surface mount configuration. Check for RoHS compliance status and lead-free certification requirements relevant to your assembly process. Ensure the ordering suffix corresponds to the correct tape-and-reel quantity if applicable.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with 60 V rating and low on-resistance is required for surface-mount designs. Consider the thermal performance capabilities defined by the DPAK package for heat dissipation needs. Evaluate the gate charge and input capacitance values against switching frequency requirements to optimize drive circuit efficiency and minimize switching losses.

Single FETs, MOSFETs Part Context

This device belongs to the family of single N-Channel and P-Channel power MOSFETs produced by Fairchild Semiconductor. These components are engineered for general-purpose power switching applications. The manufacturing process emphasizes reliability through advanced silicon technologies, targeting industries requiring compact and efficient power solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout configurations, voltage ratings, and current handling capabilities to guarantee circuit compatibility without redesign.