SI4470EY-T1-GE3

$1.90

Description：MOSFET N-CH 60V 9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:878828a30610 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4470EY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 9A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4470EY-T1-GE3

Description：MOSFET N-CH 60V 9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.85W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4470EY-T1-GE3

SI4470EY-T1-GE3

Single FETs, MOSFETs Overview

The SI4470EY-T1-GE3 is a single N-channel TrenchFET power MOSFET manufactured by Vishay Siliconix. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 16A. The device exhibits a low on-resistance of 10mΩ, ensuring efficient power handling with a maximum power dissipation of 7.1W. Designed for surface-mount applications, it utilizes an SOIC-8 package. The component operates within a temperature range of -55°C to +175°C and meets AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET technology for optimized performance characteristics
Automotive qualified under AEC-Q101 reliability standards
Capable of high continuous current operation in compact packaging

Single FETs, MOSFETs Applications

Automotive electronic systems requiring robust switching components
High-side or low-side load switch configurations
Power management circuits in automotive environments

Single FETs, MOSFETs Procurement Notes

Verify the specific part number suffix against official Vishay documentation to confirm exact electrical tolerances and manufacturing lot details. Ensure that the requested component matches the required AEC-Q101 qualification status if intended for automotive use. Cross-reference the SOIC-8 package dimensions with your PCB footprint specifications prior to procurement to guarantee mechanical compatibility.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with high current capability is required for automotive-grade applications. The low on-resistance makes it suitable for minimizing conduction losses in power paths. Consider the thermal dissipation capabilities relative to your system's cooling constraints. Verify that the gate drive voltage aligns with the specified threshold requirements for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the SQ series of TrenchFET MOSFETs from Vishay Siliconix, designed for high-performance switching applications. The series is characterized by advanced silicon technology that reduces on-resistance while maintaining high voltage blocking capabilities. The inclusion of the GE3 suffix indicates compliance with specific environmental directives regarding restricted substances.