SI4864DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4864DY-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 20 V and a continuous drain current of 25 A at 25 °C. The device exhibits a low on-state resistance of 3.5 mΩ at VGS = 4.5 V and 4.7 mΩ at VGS = 2.5 V. Key dynamic parameters include a total gate charge of 70 nC and optimized PWM characteristics.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET architecture for enhanced performance
• Optimized gate charge and resistance for high-frequency PWM applications
• Halogen-free construction compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

• Low-side switching in synchronous buck DC/DC converters
• Power management circuits in server systems
• Power regulation modules in network routers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm halogen-free status; the -E3 suffix indicates lead-free composition, while the -GE3 suffix confirms both lead-free and halogen-free compliance per IEC 61249-2-21. Ensure the procurement documentation explicitly references document number 71449 to validate the component revision and technical specifications against the manufacturer's official datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses at 20 V ratings. The SO-8 package provides a thermal path suitable for moderate power dissipation up to 3.5 W at 25 °C. Evaluate the junction-to-ambient thermal resistance of 67 °C/W for steady-state operation and ensure the PCB layout supports the recommended minimum pad dimensions for reliable soldering and heat transfer.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4864DY series of N-channel MOSFETs. It is manufactured using silicon technology and is designed for surface mounting. The product line emphasizes low on-resistance and fast switching capabilities, targeting efficiency improvements in modern power conversion architectures.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Vishay SO-8 N-channel MOSFETs offering similar 20 V ratings and comparable RDS(on) values. Verify pinout compatibility and thermal resistance characteristics before substitution to maintain circuit stability and safety margins.