Isolators - Gate Drivers SI823H6BB-IM1R product image

SI823H6BB-IM1R

  • Description:DGTL ISO 2.5KV 2CH GT DVR 14QFN
  • Series:Si823Hx
  • Mfr:Skyworks Solutions Inc.
  • Package:Tape & Reel (TR)

SKU:60e154ce98b0 Category: Brand:

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SI823H6BB-IM1R is listed in the Isolators - Gate Drivers range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is DGTL ISO 2.5KV 2CH GT DVR 14QFN. Review the specifications below when checking this part for your BOM.

Isolators - Gate Drivers specifications for SI823H6BB-IM1R

  • Description:DGTL ISO 2.5KV 2CH GT DVR 14QFN
  • Series:Si823Hx
  • Mfr:Skyworks Solutions Inc.
  • Package:Tape & Reel (TR)
  • Technology:Capacitive Coupling
  • Number of Channels:2
  • Voltage - Isolation:2500Vrms
  • Propagation Delay tpLH / tpHL (Max):30ns, 30ns
  • Pulse Width Distortion (Max):5ns
  • Rise / Fall Time (Typ):12ns, 12ns (Max)
  • Current - Output High, Low:4A, 4A
  • Current - Peak Output:6A
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:5.5V ~ 30V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:14-VDFN
  • Supplier Device Package:14-QFN (5x5)
  • Common Mode Transient Immunity (Min):125kV/µs
  • Approval Agency:CQC, CSA, UL, VDE
  • Current - DC Forward (If) (Max):-

Isolators - Gate Drivers datasheet and documents for SI823H6BB-IM1R

SI823H6BB-IM1R

Isolators - Gate Drivers Overview

The SI823H6BB-IM1R is a dual-channel isolated gate driver from Skyworks Solutions, utilizing silicon dioxide (SiO2) capacitive coupling technology for signal and power isolation. It features a 5 kVrms isolation rating and operates within an extended temperature range of -40°C to +125°C. The device provides independent high-current outputs capable of driving MOSFETs and IGBTs with peak currents up to 6 A. It includes integrated undervoltage lockout (UVLO) circuits on both the source and drain sides to prevent improper switching during low-voltage conditions. The component is housed in a compact 14-lead DFN package.

Isolators - Gate Drivers Feature Summary

  • High-speed capacitive isolation barrier using SiO2 dielectric
  • Independent dual-channel architecture for bridge configurations
  • Integrated source-side and drain-side undervoltage lockout protection
  • Robust electromagnetic interference immunity

Isolators - Gate Drivers Applications

  • Industrial motor drives and inverters
  • Solar microinverter systems
  • Battery management system (BMS) contactor control
  • Uninterruptible power supply (UPS) topologies

Isolators - Gate Drivers Procurement Notes

Verify the specific suffix 'IM1R' against the manufacturer's official datasheet to confirm the 14-lead DFN package and reel packaging configuration. Ensure that the required isolation voltage ratings and operating temperature ranges align with the target application's environmental specifications before finalizing procurement orders.

Isolators - Gate Drivers Selection Notes

Select this component when high-density isolation is required for power stages. The dual-channel design supports half-bridge and full-bridge applications efficiently. Consider the 6 A output current capability for medium-power devices. Verify compatibility with the control logic voltage levels and ensure adequate PCB layout for the capacitive isolation barrier.

Isolators - Gate Drivers Part Context

This part belongs to the Si823Hx family of isolated gate drivers. The series is characterized by its use of advanced SiO2 insulation technology, offering superior reliability compared to traditional polymer or air-gap isolators. The family supports various package options to accommodate different thermal and spatial constraints in power electronics designs.

Isolators - Gate Drivers Replacement Considerations

Direct substitutes include other Skyworks Si823Hx variants such as SI823H6BB-IS1R or SI823H6CD-IS1R, provided they match the required isolation voltage and package type. Cross-manufacturer replacements require careful evaluation of pinout compatibility and electrical parameter alignment.

SI823H6BB-IM1RSI823H6BB-IM1R

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