SIE726DF-T1-E3

Single FETs, MOSFETs Overview

The SIE726DF-T1-E3 is an N-Channel MOSFET with an integrated Schottky diode, manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PolarPAK (L) package with ten terminals. The device supports a drain-source voltage of 30 V and a continuous drain current of 60 A at case temperature. Thermal performance includes a power dissipation rating of 5.2 W at ambient temperature and 125 W at case temperature.

Single FETs, MOSFETs Feature Summary

• Integrates a fast-recovery Schottky diode for synchronous rectification applications
• Utilizes TrenchFET technology to achieve low on-resistance
• Features a compact PolarPAK surface-mount package design

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• High-efficiency power supply designs
• Motor control circuits requiring body diode replacement

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix configuration against official Vishay documentation to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status through the manufacturer's latest product change notices. Cross-reference the ordering number with authorized distributors to validate availability and authenticity before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in a compact form factor. The integrated Schottky diode reduces external component count and improves switching efficiency compared to standard MOSFETs. Ensure the PCB layout supports the thermal requirements of the PolarPAK package to maintain optimal performance under load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the SiE series of power MOSFETs from Vishay Siliconix. The series is characterized by advanced trench gate technology designed for high-performance switching applications. The integration of the Schottky diode distinguishes it from standard discrete MOSFETs, offering enhanced functionality for specific power conversion topologies.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides for verified alternatives. Generic replacements may not match the integrated diode characteristics or thermal profile.