SISS92DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SISS92DN-T1-GE3 is a single N-channel MOSFET utilizing TrenchFET with ThunderFET technology. It features a drain-source voltage of 250 V and a maximum on-resistance of 0.173 Ω at VGS = 10 V. The device supports a continuous drain current of 12.3 A at TC = 25 °C. Total gate charge is typically 8.1 nC at VGS = 7.5 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK 1212-8S surface-mount package.

Single FETs, MOSFETs Feature Summary

• TrenchFET with ThunderFET technology optimizes the balance between RDS(on), Qg, Qsw, and Qoss for high efficiency.
• Provides leadership RDS(on) and RDS-Coss Figure of Merit (FOM).
• Guarantees 100% testing for gate resistance (Rg) and Unclamped Inductive Switching (UIS).

Single FETs, MOSFETs Applications

• Primary side switching
• Synchronous rectification
• DC/DC topologies
• Lighting
• Load switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm manufacturing origin and compliance status. The standard GE3 suffix indicates lead-free and halogen-free construction. Confirm that the BLR and IOL variant (UE3) or alternate location variant (BE3) meets project requirements if different sourcing is needed. Ensure compatibility with the specified leadless PowerPAK 1212-8S soldering profile.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling up to 250 V with low conduction losses. The optimized gate charge characteristics support efficient switching performance in DC/DC converters and synchronous rectification circuits. Verify thermal management capabilities against the specified junction-to-case resistance for the intended power dissipation levels.

Single FETs, MOSFETs Part Context

This part belongs to the SiSS series of N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK 1212-8S leadless package designed for surface mount applications. The device integrates an intrinsic body diode and is manufactured using silicon technology compliant with RoHS directives.

Single FETs, MOSFETs Replacement Considerations

SiSS92DN-T1-UE3 (Lead-free, halogen-free, BLR and IOL)

Single FETs, MOSFETs FAQ

Is manual soldering recommended for the PowerPAK 1212-8S package?

No, manual soldering with a soldering iron is not recommended for these leadless components.

What is the status of the exposed copper at the lead terminal ends?

The end of the lead terminal is exposed copper due to the singulation process; a solder fillet at this tip cannot be guaranteed and is not required for adequate interconnection.