SMMBT5551LT3G

Description：TRANS NPN 160V 0.6A SOT23-3
Series：-

SKU:b9fbd3005197 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

SMMBT5551LT3G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 160V 0.6A SOT23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for SMMBT5551LT3G

Description：TRANS NPN 160V 0.6A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：225 mW
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for SMMBT5551LT3G

SMMBT5551LT3G

Single Bipolar Transistors Overview

The SMMBT5551LT3G is an NPN silicon high-voltage transistor manufactured by onsemi, housed in a surface-mount SOT-23 (TO-236) package. It features a collector-emitter voltage of 160 V and a continuous collector current rating of 600 mA. The device supports a junction temperature range from -55°C to +150°C. Electrical characteristics include a DC current gain ranging from 20 to 250 at specific test conditions, with a maximum power dissipation of 225 mW on FR-5 boards and 300 mW on alumina substrates.

Single Bipolar Transistors Feature Summary

High voltage capability with a 160 V collector-emitter breakdown rating
Suitable for general-purpose switching and amplification applications
Compliant with RoHS standards and free of halogens and brominated flame retardants

Single Bipolar Transistors Applications

General purpose switching circuits
Medium power amplification stages
Automotive electronics requiring unique site control

Single Bipolar Transistors Procurement Notes

Verify the part number against official onsemi documentation to ensure correct suffix identification. Confirm that the 'S' prefix indicates automotive qualification and PPAP capability if required for the specific application environment. Cross-reference datasheet revisions to validate thermal and electrical parameters before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with high voltage tolerance is needed in a compact surface-mount form factor. Ensure the design accounts for the specified power derating above 25°C. Verify that the base-emitter voltage limits are not exceeded during operation to maintain reliability within the stated operating temperature range.

Single Bipolar Transistors Part Context

This device belongs to the MMBT5551L series of high-voltage transistors. It serves as the tape-and-reel variant of the SMMBT5551LT1G, sharing identical electrical and mechanical specifications. The series is designed for robust performance in space-constrained electronic designs requiring reliable high-voltage switching capabilities.