SQ2303ES-T1_GE3

$0.37

Description：MOSFET P-CH 30V 2.5A TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b47fe78d1bff Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQ2303ES-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 2.5A TO236. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQ2303ES-T1_GE3

Description：MOSFET P-CH 30V 2.5A TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：170mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：210 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.9W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SQ2303ES-T1_GE3

SQ2303ES-T1_GE3

Single FETs, MOSFETs Overview

The SQ2303ES-T1_GE3 is a Vishay Siliconix P-Channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and a continuous drain current of -2.5 A at 25 °C. The device offers a maximum on-resistance of 0.170 Ω at VGS = -10 V and 0.370 Ω at VGS = -4.5 V. Packaged in an SOT-23 (TO-236) surface-mount housing, it supports an operating junction temperature range from -55 °C to +175 °C. The component is AEC-Q101 qualified for automotive applications.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
AEC-Q101 qualified for automotive environments
100% Rg and UIS tested

Single FETs, MOSFETs Applications

Automotive electronic circuits
Power management systems
Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance details. Confirm that the requested part number matches the exact package type and lead-free specifications defined by the manufacturer. Ensure all technical parameters align with the intended application requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a single P-Channel MOSFET in an SOT-23 package. Consider the thermal resistance ratings and safe operating area when determining heat dissipation capabilities. Verify gate drive voltage levels to ensure optimal on-state resistance performance within the specified electrical limits.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SQ series of power MOSFETs. It utilizes silicon technology and is designed for surface-mount installation. The device is manufactured under the TrenchFET brand name, representing a specific generation of vertical N-channel and P-channel power MOSFETs optimized for low on-resistance.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package or voltage ratings without verifying electrical characteristics and pin configurations.