SQD40N10-25-T4_GE3

$0.54

Description：MOSFET N-CH 100V 40A TO252AA
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:b0447ccb13ca Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQD40N10-25-T4_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 40A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQD40N10-25-T4_GE3

Description：MOSFET N-CH 100V 40A TO252AA
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SQD40N10-25-T4_GE3

SQD40N10-25-T4_GE3

Single FETs, MOSFETs Overview

The SQD40N10-25-T4_GE3 is an automotive-grade N-channel enhancement mode MOSFET from the Vishay Siliconix SQD series. It utilizes TrenchFET technology and is housed in a TO-252 (DPAK) surface-mount package with the drain connected to the tab. The device is qualified under AEC-Q101 standards for high reliability. Key electrical parameters include a maximum drain-source voltage of 100 V, a continuous drain current of 40 A at 25 °C case temperature, and a typical on-state resistance of 0.025 Ω at VGS = 10 V. It supports a maximum junction temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology providing low thermal resistance
AEC-Q101 qualified for automotive applications
100% tested for Rg and Unclamped Inductive Switching (UIS)
Drain connected to the exposed tab for efficient heat dissipation

Single FETs, MOSFETs Applications

Automotive power switching circuits
High-side and low-side load switch applications
DC-DC converter topologies requiring rugged performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact tape-and-reel configuration and manufacturing lot requirements. Ensure that the component meets all applicable RoHS and REACH compliance standards relevant to your target market before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems that require robust avalanche energy handling and high-temperature operation up to 175 °C. The TO-252 package is suitable for applications needing moderate current levels with effective thermal management via PCB mounting. Validate gate drive requirements against the specified threshold voltage and total gate charge characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay SQD series of automotive MOSFETs, which are engineered for high reliability in demanding environments. The series features TrenchFET technology optimized for low on-resistance and fast switching speeds. These devices are specifically designed to meet the stringent qualification requirements of the automotive industry.