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SQJ128ELP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is AUTOMOTIVE N-CHANNEL 30 V (D-S). Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SQJ128ELP-T1_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 30 V drain-source voltage rating and operates up to +175 °C junction temperature. The device provides a continuous drain current of 437 A at 25 °C case temperature, with a maximum on-resistance of 1.66 mΩ at VGS = 4.5 V. Packaged in a PowerPAK SO-8L footprint, it supports high-power applications requiring low thermal resistance.
Verify the specific suffix against official documentation to confirm compliance requirements. Ensure that the ordering information matches the exact package variant and qualification level required for your design. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement specifications.
Evaluate the thermal management strategy based on the specified junction-to-case resistance. Confirm that the gate drive voltage meets the minimum threshold for optimal on-state conduction. Verify PCB land pattern dimensions align with the PowerPAK SO-8L outline to ensure proper soldering and heat dissipation.
This component belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes advanced TrenchFET Gen IV technology to achieve low on-resistance within a compact surface-mount package. The series is designed specifically for demanding automotive environments requiring high current handling capabilities.
Consult the official Vishay cross-reference guide for verified substitutes. Ensure any replacement part maintains identical pinout configuration and exceeds the original electrical ratings. Validate that alternative components meet the same AEC-Q101 qualification standards.
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