Single Bipolar Transistors SS9012HBU product image

SS9012HBU

$0.03
  • Description:TRANS PNP 20V 0.5A TO-92-3
  • Series:-

SKU:e4b7bcae6760 Category: Brand:

  
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SS9012HBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is TRANS PNP 20V 0.5A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for SS9012HBU

  • Description:TRANS PNP 20V 0.5A TO-92-3
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:144 @ 50mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for SS9012HBU

SS9012HBU

Single Bipolar Transistors Overview

The SS9012HBU is a small signal PNP bipolar junction transistor manufactured by Fairchild Semiconductor. It features a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 20 V. The device utilizes a TO-92 plastic encapsulated package with three through-hole pins. Key electrical specifications include a maximum power dissipation of 625 mW at 25°C ambient temperature, a collector-base breakdown voltage of -40 V, and an emitter-base breakdown voltage of -5 V. The minimum DC current gain (hFE) is specified as 96.

Single Bipolar Transistors Feature Summary

  • Designed for high total power dissipation capabilities within a compact form factor.
  • Provides high collector current handling suitable for small signal applications.
  • Offers excellent hFE linearity for consistent amplification performance.
  • Functionally complementary to the NPN SS9013 transistor for push-pull configurations.

Single Bipolar Transistors Applications

  • Output amplifier stages in portable radios operating in Class B push-pull mode
  • General-purpose small signal amplification circuits
  • Switching applications requiring low voltage and moderate current control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix HBU against the manufacturer's official datasheet to confirm pinout orientation and packaging variations. Ensure the component meets RoHS compliance requirements if mandated by the design specification. Cross-reference the part number with authorized distributors to confirm availability and authenticity, as manufacturing sources may vary between Fairchild and onsemi due to corporate acquisitions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 20V collector-emitter voltage and 500mA continuous current capability is required. The TO-92 package is suitable for through-hole mounting on standard PCBs. Consider the complementary SS9013NPN counterpart if designing balanced push-pull output stages. Verify thermal management needs, as the 625mW power dissipation rating requires adequate heat sinking or airflow for sustained high-load operations.

Single Bipolar Transistors Part Context

The SS9012 series belongs to the family of small signal silicon PNP transistors widely used in audio and radio frequency applications. Manufactured originally by Fairchild Semiconductor, these devices are characterized by their linear gain characteristics and robustness in low-power switching environments. The series is often paired with its NPN equivalent, the SS9013, to create efficient complementary symmetry circuits.

Single Bipolar Transistors Replacement Considerations

  • SS9012GBU
  • SS9012GTA
  • S9012

Single Bipolar Transistors FAQ

Is the SS9012HBU complementary to another specific transistor?

Yes, the SS9012HBU is functionally complementary to the NPN SS9013 transistor, making it suitable for use in Class B push-pull amplifier configurations.

What is the maximum power dissipation rating?

The maximum total power dissipation is 625 mW at an ambient temperature of 25°C.

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 20 V.

SS9012HBUSS9012HBU
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