SSS6N70A

$0.90

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:6404fc90c0ae Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

SSS6N70A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSS6N70A

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for SSS6N70A

SSS6N70A

Single FETs, MOSFETs Overview

The SSS6N70A is an N-channel power MOSFET manufactured by Fairchild Semiconductor. It utilizes advanced avalanche rugged technology and features a TO-220F package with three terminals. The device has a minimum drain-source breakdown voltage of 700 V, a maximum continuous drain current of 4 A, and a maximum on-resistance of 1.8 Ω. It includes a built-in diode configuration and offers an avalanche energy rating of 560 mJ.

Single FETs, MOSFETs Feature Summary

Advanced Avalanche Rugged Technology for enhanced reliability under transient conditions
Rugged Gate Oxide Technology designed to improve gate stability and performance
Extended Safe Operating Area providing robust operation across varying load conditions

Single FETs, MOSFETs Applications

High-voltage switching circuits requiring avalanche resistance
Power management systems utilizing rugged MOSFET characteristics
Applications demanding low leakage current at high voltages

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor when sourcing this component. Confirm the specific package type is TO-220F and check for RoHS compliance status. Ensure the part number matches exactly to avoid confusion with similar variants from other manufacturers like Samsung which share the same model designation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage handling up to 700 V with moderate current capacity. The 4 A current rating and 1.8 Ω on-resistance define its conduction capabilities. Consider the TO-220F package for thermal management needs in through-hole mounting scenarios where avalanche ruggedness is a critical design parameter.

Single FETs, MOSFETs Part Context

This component belongs to the category of discrete semiconductor transistors, specifically power field-effect transistors. It is classified as an N-channel silicon metal-oxide semiconductor FET. The device is designed for general-purpose power switching applications within the specified voltage and current limits defined by its electrical characteristics.