STD11N60DM2

Single FETs, MOSFETs Overview

The STD11N60DM2 is an N-channel enhancement-mode Power MOSFET from STMicroelectronics, utilizing MDmesh DM2 technology. It features a maximum drain-source voltage of 650 V and a continuous drain current of 10 A. The device offers a typical on-resistance of 370 mΩ and a gate charge of 16.5 nC at 10 V. Packaged in TO-252 (DPAK), it supports surface-mount installation with a power dissipation rating of 110 W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Integrates a fast-recovery body diode with low recovery charge and time for high-efficiency operation.
• Features extremely low gate charge and input capacitance to minimize switching losses.
• Includes Zener protection on the gate terminal for enhanced robustness.
• Demonstrates extremely high dv/dt ruggedness and undergoes 100% avalanche testing.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Full-bridge phase-shifted Zero Voltage Switching (ZVS) topologies
• Bridge rectifier circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and package variant against the manufacturer's official datasheet before procurement. Confirm that the component meets the required electrical specifications for the target application. Check for any end-of-life notifications or alternative recommendations provided by the supplier. Ensure compatibility with the intended mounting process and thermal management requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with optimized switching performance. The MDmesh DM2 technology provides a balance of low conduction losses and fast recovery characteristics. Consider the TO-252 package for surface-mount applications where space efficiency is critical. Evaluate the thermal dissipation capabilities relative to the expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh DM2 series of high-voltage N-channel Power MOSFETs. The series is designed for demanding power conversion applications, emphasizing efficiency through reduced switching losses. It represents a specialized solution within STMicroelectronics' broader portfolio of power semiconductors.

Single FETs, MOSFETs Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical parameter equivalence when considering alternatives.