STD150N3LLH6

$2.42

Description：MOSFET N-CH 30V 80A DPAK
Series：DeepGATE™, STripFET™ VI
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bf7712946ea7 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STD150N3LLH6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 30V 80A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STD150N3LLH6

Description：MOSFET N-CH 30V 80A DPAK
Series：DeepGATE™, STripFET™ VI
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for STD150N3LLH6

STD150N3LLH6

Single FETs, MOSFETs Overview

The STD150N3LLH6 is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing the STripFET H6 technology with a new trench gate structure. It is housed in a DPAK surface-mount package and features a drain-source breakdown voltage of 30 V. The device offers a typical on-resistance of 2.4 mΩ and supports a continuous drain current of up to 80 A at case temperature. Designed for high power density applications, it provides low gate charge and high avalanche ruggedness.

Single FETs, MOSFETs Feature Summary

Utilizes STripFET H6 technology with a new trench gate structure for very low on-resistance
Features high avalanche ruggedness and low gate drive power loss
Employed in high power density 30V surface mount power transistor designs

Single FETs, MOSFETs Applications

High power density 30V surface mount power transistor applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official STMicroelectronics channels or authorized distributors. Confirm that the specific part number matches the required DPAK package and electrical specifications. Check for any end-of-life notices or product change notifications, as availability may be restricted. Ensure compliance with RoHS standards and relevant automotive qualifications if applicable to the design requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with low on-resistance in a DPAK package is required. Consider its STripFET H6 technology benefits for efficiency. Evaluate thermal performance based on the 80A continuous drain current rating. Compare against other variants in the series for package size and specific resistance values.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET H6 family of N-channel Power MOSFETs from STMicroelectronics. It shares technological roots with other devices like STL150N3LLH6 but differs in packaging, using DPAK instead of PowerFLAT. The family focuses on high unit density and low on-resistance for efficient power switching solutions.