Single FETs, MOSFETs STD2NK90Z-1 product image

STD2NK90Z-1

$1.75
  • Description:MOSFET N-CH 900V 2.1A IPAK
  • Series:SuperMESH™
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:15e038a96df2 Category: Brand:

  
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STD2NK90Z-1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 900V 2.1A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STD2NK90Z-1

  • Description:MOSFET N-CH 900V 2.1A IPAK
  • Series:SuperMESH™
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.5Ohm @ 1.05A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):70W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for STD2NK90Z-1

STD2NK90Z-1

Single FETs, MOSFETs Overview

The STD2NK90Z-1 is an N-channel Power MOSFET from STMicroelectronics utilizing SuperMESH technology. It features a drain-source voltage (Vds) of 900 V and a continuous drain current (Id) of 2.1 A at case temperature. The device has a typical on-resistance (Rds(on)) of 5 Ω and a maximum power dissipation (Pd) of 70 W at case temperature. It operates within a junction temperature range of -55°C to 150°C and is housed in a through-hole IPAK package with three pins.

Single FETs, MOSFETs Feature Summary

  • Integrated Zener diode protection between gate and source for enhanced reliability
  • SuperMESH technology optimization for minimized gate charge
  • High-voltage capability suitable for robust switching applications

Single FETs, MOSFETs Applications

  • High-voltage power switching circuits
  • General-purpose power management systems
  • Industrial control equipment requiring isolated high-side switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '-1' during procurement, as it denotes the integrated Zener protection variant distinct from standard versions like STD2NK90Z. Confirm the IPAK through-hole package requirement against PCB footprint specifications. Ensure thermal management design accounts for the 70 W case temperature dissipation limit rather than free-air ratings.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation with built-in gate protection is required. Compare Rds(on) and gate charge metrics against other SuperMESH variants if lower conduction losses are critical. Verify that the through-hole IPAK form factor aligns with assembly constraints compared to surface-mount alternatives like TO-252 or TO-220 packages.

Single FETs, MOSFETs Part Context

This part belongs to the SuperMESH family of high-voltage MOSFETs designed by STMicroelectronics. It shares technological roots with devices such as the STP3NK90Z and STD3NK90ZT4 but differs in current rating and package type. The inclusion of the Zener diode distinguishes it from unprotected counterparts within the same voltage class.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include STD2NK90Z (without Zener) if protection is provided externally. For pin-compatible replacements with similar electrical characteristics, consider other 900 V N-channel MOSFETs in IPAK packages from compatible manufacturers, ensuring Rds(on) and Vgs thresholds match.

STD2NK90Z-1STD2NK90Z-1
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