STF12NK80Z

Single FETs, MOSFETs Overview

STF12NK80Z is an N-channel enhancement-mode power MOSFET from STMicroelectronics, utilizing SuperMESH technology. It features a maximum drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 10.5 A. The device has a typical on-resistance (Rds(on)) of 0.65 Ohm and is housed in a TO-220 package with three pins for through-hole mounting. It includes integrated Zener protection for the gate terminal.

Single FETs, MOSFETs Feature Summary

• SuperMESH technology optimization significantly reduces on-resistance compared to standard PowerMESH designs.
• Integrated Zener diode provides gate protection against transient voltage spikes.
• High dv/dt capability ensures reliable operation in demanding switching applications.
• Enhanced electrostatic discharge (ESD) tolerance improves robustness during handling.

Single FETs, MOSFETs Applications

• High-voltage power supply circuits
• Industrial motor control systems
• General-purpose high-voltage switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Z' indicates the presence of the internal Zener gate protection feature, as this distinguishes it from non-protected variants within the same series. Confirm the package type matches the required thermal management strategy for the target application. Ensure the component meets RoHS compliance requirements if applicable to the manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating and 10.5 A current capacity are required in a TO-220 form factor. The low on-resistance minimizes conduction losses, while the Zener protection simplifies gate drive circuit design by eliminating external clamping components. Consider thermal dissipation capabilities relative to the expected load conditions.

Single FETs, MOSFETs Part Context

The STF12NK80Z belongs to the SuperMESH series, representing an evolution of ST's PowerMESH technology. This family focuses on optimizing the trade-off between on-resistance and gate charge for high-voltage applications. It shares architectural similarities with other SuperMESH devices but is distinct due to its specific voltage, current, and package specifications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include STF3NK80Z and STF10NK80Z, which share the SuperMESH technology and TO-220 package. Verify that the alternative part's current rating and on-resistance meet the system requirements before substitution.