STF18NM60ND

Single FETs, MOSFETs Overview

The STF18NM60ND is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh II technology. It features a 600V drain-source voltage and a typical on-resistance of 260 mΩ. The device supports a continuous drain current of 13A and operates within a temperature range of -55°C to +150°C. Packaged in TO-220FP, it offers low input capacitance and gate charge for efficient switching.

Single FETs, MOSFETs Feature Summary

• MDmesh II technology combines vertical structure with strip layout for optimized performance
• Low input capacitance and gate charge reduce switching losses
• Low gate input resistance simplifies driver requirements
• 100% avalanche tested for enhanced ruggedness

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Power factor correction circuits
• Isolated bridge topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'D' against official datasheets to confirm lead-free status or tape-and-reel packaging variations. Confirm RoHS compliance and REACH SVHC declarations directly with the manufacturer before integration into regulated supply chains.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling with moderate current capabilities. The TO-220FP package facilitates through-hole mounting and heatsinking. Ensure thermal management design accounts for the specified power dissipation limits under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh II family, designed to balance conduction and switching losses. It serves as a discrete solution for medium-power conversion stages where efficiency and reliability are critical parameters for system performance.

Single FETs, MOSFETs Replacement Considerations

STF18NM60N is a similar variant in the same series but may differ in packaging or specific electrical tolerances. Verify pinout compatibility and thermal characteristics before substitution.