STGAP3S6STR

Isolators - Gate Drivers Overview

The STGAP3S6STR is a galvanically isolated single gate driver designed for silicon carbide (SiC) power devices. It features a high voltage rail capability up to 1200 V and provides a peak output current of 10 A source and 6 A sink at 25 °C. The device offers ±200 V/ns common mode transient immunity and a typical input-output propagation delay of 75 ns. It operates within an extended temperature range from -40 °C to +125 °C with an operating supply current of 13 mA.

Isolators - Gate Drivers Feature Summary

• Galvanic isolation suitable for SiC applications
• Integrated desaturation protection functionality
• High common mode transient immunity

Isolators - Gate Drivers Applications

• Silicon Carbide (SiC) MOSFET gate driving
• Industrial motor drives
• High voltage power conversion systems

Isolators - Gate Drivers Procurement Notes

Verify the specific suffix 'STR' indicates tape and reel packaging when ordering. Confirm the automotive-grade status if required for your application, as datasheets may distinguish between standard and qualified variants. Ensure the SO-16W package dimensions match your PCB footprint requirements before finalizing procurement.

Isolators - Gate Drivers Selection Notes

Select this component when driving SiC devices requiring high dv/dt immunity and integrated desaturation protection. The 1200 V rail rating supports high-voltage topologies. Compare the 6/10 A sink/source current capabilities against load requirements. Verify that the ±200 V/ns CMTI meets system noise immunity standards.

Isolators - Gate Drivers Part Context

This part belongs to the STGAP3S series of protected single gate drivers from STMicroelectronics. The series is engineered for robust performance in high-frequency switching applications. The STR suffix typically denotes a specific packaging format for automated assembly processes.

Isolators - Gate Drivers Replacement Considerations

Check for direct cross-references within the STGAP3S family. Verify pinout compatibility and electrical parameters such as propagation delay and peak current when substituting with other isolated gate drivers.