STH12N120K5-2AG

Single FETs, MOSFETs Overview

The STH12N120K5-2AG is an automotive-grade N-channel Power MOSFET utilizing MDmesh K5 technology. It features a 1200 V drain-source breakdown voltage and a maximum on-resistance of 1.9 Ω at VGS = 10 V. The device supports a continuous drain current of 7 A at 25 °C case temperature, with a pulsed current rating of 12 A. Packaged in H²PAK-2, it offers a thermal resistance from junction to case of 0.47 °C/W and operates within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Ultra-low gate charge enabled by proprietary vertical structure
• 100% avalanche tested for ruggedness
• Very low figure of merit (FoM) for high efficiency

Single FETs, MOSFETs Applications

• Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STH12N120K5-2AG against the datasheet revision DS14124 Rev 2. Confirm that the H²PAK-2 package and tape-and-reel packing match your assembly requirements. Ensure design parameters align with the absolute maximum ratings, particularly the 1200 V breakdown and 7 A continuous current limits at specified temperatures.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage switching with automotive qualification. The MDmesh K5 technology provides superior power density compared to standard structures. Consider the 0.47 °C/W junction-to-case thermal resistance for heat dissipation planning. Verify compatibility with the required gate drive voltages and ensure the operating environment stays within the -55 °C to 150 °C junction temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh K5 series of very high voltage super-junction MOSFETs from STMicroelectronics. It shares core technology with other variants like STH12N120K5-2 but differs in packaging and specific electrical tolerances. The H²PAK-2 package is designed for efficient thermal management in compact power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include STH12N120K5-2 if the non-automotive grade is acceptable. Other MDmesh K5 devices in different packages such as TO-3PF or TO-247 may serve as functional alternatives if pinout and thermal constraints allow.