STP19NB20

Single FETs, MOSFETs Overview

The STP19NB20 is an N-channel PowerMESH MOSFET from STMicroelectronics, utilizing the MESH OVERLAY process. It features a typical RDS(on) of 0.15 Ω and supports a continuous drain current of 19 A at 25°C case temperature. The device offers a 200 V breakdown voltage and is rated for a pulsed drain current of 76 A. Key electrical characteristics include a gate threshold voltage of 3-5 V and a total gate charge of 40 nC maximum. Thermal resistance junction-to-case is 3.57 °C/W for TO-220 packages.

Single FETs, MOSFETs Feature Summary

• Utilizes high voltage MESH OVERLAY process with patent-pending strip layout for low on-resistance per area.
• Features extremely high dv/dt capability and exceptional avalanche performance.
• Gate charge is minimized to improve switching characteristics.

Single FETs, MOSFETs Applications

• High current, high speed switching
• Switch mode power supplies (SMPS)
• DC-AC converters for telecom, industrial and consumer environments

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official STMicroelectronics channels or authorized distributors. Confirm package type matches requirements as variants exist in TO-220, TO-220FP, and I2PAK. Check datasheet revision dates for updated thermal and electrical specifications. Ensure handling procedures comply with ESD protection standards during installation.

Single FETs, MOSFETs Selection Notes

Select based on required drain-source voltage and continuous current ratings relative to operating temperature. Consider thermal resistance values when designing heat dissipation solutions. Evaluate gate charge parameters for driving circuit compatibility. Verify package dimensions against PCB layout constraints before finalizing design choices.

Single FETs, MOSFETs Part Context

This component belongs to the PowerMESH family of advanced power MOSFETs designed by STMicroelectronics. These devices are engineered for high efficiency and reliability in power conversion applications. The specific model integrates proprietary edge termination structures to enhance breakdown voltage capabilities while maintaining low conduction losses.

Single FETs, MOSFETs Replacement Considerations

STB19NB20-1 is a confirmed substitute part number within the same product family offering identical electrical specifications and pinout configurations.