Single FETs, MOSFETs STP32NM50N product image

STP32NM50N

$6.24
  • Description:MOSFET N CH 500V 22A TO-220
  • Series:MDmesh™ II
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:973f8953a708 Category: Brand:

  
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STP32NM50N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N CH 500V 22A TO-220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP32NM50N

  • Description:MOSFET N CH 500V 22A TO-220
  • Series:MDmesh™ II
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:130mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:62.5 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1973 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):190W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for STP32NM50N

STP32NM50N

Single FETs, MOSFETs Overview

The STP32NM50N is an N-channel Power MOSFET from the MDmesh™ II series, manufactured by STMicroelectronics. It features a 500V drain-source voltage rating and a continuous drain current of 22A at case temperature. The device exhibits a maximum on-resistance of 130mΩ at 10V gate drive. Key electrical characteristics include a gate charge of 62.5nC and an input capacitance of 1973pF. Designed for high-efficiency switching applications, it utilizes advanced vertical structure technology to minimize conduction losses while maintaining robust avalanche performance.

Single FETs, MOSFETs Feature Summary

  • Utilizes second-generation MDmesh™ technology combining new vertical structure with strip layout for low on-resistance and gate charge
  • Features 100% avalanche tested reliability for demanding high efficiency converter applications
  • Provides low input capacitance and low gate input resistance for efficient switching performance

Single FETs, MOSFETs Applications

  • High efficiency power converters
  • General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as the TO-220 designation may correspond to different suffixes in official documentation. Confirm RoHS compliance status and ensure the ordering code matches the exact pinout and thermal requirements. Cross-reference the manufacturer's latest datasheet to validate current production status and any potential obsolescence notices before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V N-channel MOSFET with low Rds(on) is required for through-hole mounting. The 22A current rating suits moderate power levels where TO-220 thermal dissipation is sufficient. Consider the MDmesh™ II technology benefits for applications prioritizing reduced switching losses and improved efficiency over standard planar MOSFET alternatives.

Single FETs, MOSFETs Part Context

This part belongs to the STP32 family of N-channel Power MOSFETs. It shares the MDmesh™ II technology platform with variants like STW32NM50N, differing primarily in packaging. The family targets industrial and consumer power supplies requiring reliable high-voltage switching capabilities with optimized dynamic performance characteristics.

Single FETs, MOSFETs Replacement Considerations

STW32NM50N serves as a direct functional substitute with identical electrical specifications but utilizes a TO-247 package instead of TO-220.

STP32NM50NSTP32NM50N
$6.24
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