SUD23N06-31-BE3

$1.27

Description：MOSFET N-CH 60V 9.1A/21.4A DPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e98e099b940a Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SUD23N06-31-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 9.1A/21.4A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUD23N06-31-BE3

Description：MOSFET N-CH 60V 9.1A/21.4A DPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9.1A (Ta), 21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：670 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5.7W (Ta), 31.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SUD23N06-31-BE3

SUD23N06-31-BE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SUD23N06-31-BE3 is a single N-channel TrenchFET power MOSFET housed in a TO-252 (DPAK) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 9.1 A at an ambient temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.045 Ω at a gate-source voltage of 4.5 V, with a typical total gate charge of 11 nC. It supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET technology for optimized performance
Includes 100% Rg and UIS testing for reliability
Compliant with RoHS Directive 2002/95/EC

Single FETs, MOSFETs Applications

DC/DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance details such as halogen-free status or lead content. Confirm that the component meets all required environmental standards for the intended application before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 60 V rated N-channel MOSFET in a compact DPAK footprint. Ensure the design accommodates the specified thermal resistance values and verify that the gate drive voltage aligns with the threshold requirements for optimal on-state resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SUD series of N-channel power MOSFETs. These devices are engineered using TrenchFET technology to provide low on-resistance and fast switching capabilities within standard surface-mount packages suitable for general-purpose power switching applications.