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SUP75P03-07-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 75A TO220AB. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SUP75P03-07-E3 is a P-channel MOSFET utilizing TrenchFET technology, housed in a TO-220AB package. It features a drain-source breakdown voltage of -30 V and a continuous drain current rating of -75 A. The device exhibits a maximum on-state resistance of 0.010 Ω at VGS = -4.5 V and 0.007 Ω at VGS = -10 V. Thermal performance includes a junction-to-case resistance of 0.8 °C/W and a power dissipation capacity of 187 W at 25 °C case temperature. Operating temperatures range from -55 °C to +175 °C.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and lead-free termination specifications against the latest datasheet revision. Validate package markings and electrical parameters prior to integration into production systems.
Select this component for designs requiring high current handling with efficient thermal dissipation. Ensure gate drive voltages align with specified thresholds for optimal RDS(on) performance. Evaluate thermal constraints based on PCB mounting or free-air cooling requirements to maintain safe operating temperatures.
This part belongs to the Vishay Siliconix SUP series of P-channel MOSFETs. It shares architectural similarities with the SUB75P03-07 variant but utilizes a through-hole TO-220AB package instead of surface-mount TO-263. Both variants share identical electrical characteristics and thermal ratings.
SUB75P03-07-E3 serves as a functional equivalent with identical electrical specifications, differing only in the surface-mount TO-263 package configuration.
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