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T2810N18TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 2200V 5800A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：2.2 kV
- Current - On State (It (AV)) (Max)：2810 A
- Current - On State (It (RMS)) (Max)：5800 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：58000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：DO-200AE
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：300 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T2810N18TOFVTXPSA1 is an electrically triggered phase control thyristor (SCR) manufactured by Infineon Technologies. It features a rated repetitive off-state voltage of 1800 V and a maximum holding current of 300 mA. The device supports an RMS on-state current of 2.02 kA with a forward voltage drop of 1.95 V at peak current. Gate triggering requirements include a voltage of 2.2 V and a current of 250 mA. It operates within a temperature range of -40°C to +125°C and utilizes a surface-mount disc package.
Feature Summary
- High-voltage blocking capability for robust power switching
- Electrical gate triggering for precise phase control applications
- Disc package design suitable for high-current thermal management
Applications
- Industrial motor drives
- HVDC transmission systems
- High-power rectifier bridges
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific suffix designation matches project requirements, as variations may exist. Check for end-of-life notifications or discontinuation notices prior to finalizing procurement plans to ensure long-term supply chain stability.
Selection Notes
Select this component for applications requiring high voltage isolation and significant current handling capacity. Ensure the gate drive circuit can provide the specified 2.2 V and 250 mA trigger parameters. Verify that the system's thermal design accommodates the device's junction temperature limits and heat dissipation requirements under continuous operation.
Part Context
This part belongs to Infineon's high-power thyristor portfolio, designed for demanding industrial and energy infrastructure applications. It represents a standard electrical-triggered phase control device within the company's broader semiconductor offering for power conversion and distribution systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for qualified alternatives if this specific model is discontinued or unavailable.
