Inverter Gates TC7SZ00FE,LJ(CT product image

TC7SZ00FE,LJ(CT

$0.31
  • Description:IC GATE NAND 1CH 2-INP ESV
  • Series:TC7SZ
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c2ed6849d932 Category: Brand:

  
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TC7SZ00FE,LJ(CT is listed in the Inverter Gates range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is IC GATE NAND 1CH 2-INP ESV. Review the specifications below when checking this part for your BOM.

Inverter Gates specifications for TC7SZ00FE,LJ(CT

  • Description:IC GATE NAND 1CH 2-INP ESV
  • Series:TC7SZ
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Logic Type:NAND Gate
  • Number of Circuits:1
  • Number of Inputs:2
  • Features:-
  • Voltage - Supply:1.65V ~ 5.5V
  • Current - Quiescent (Max):2 µA
  • Current - Output High, Low:32mA, 32mA
  • Input Logic Level - Low:-
  • Input Logic Level - High:-
  • Max Propagation Delay @ V, Max CL:3.6ns @ 5V, 50pF
  • Operating Temperature:-40°C ~ 85°C
  • Mounting Type:Surface Mount
  • Supplier Device Package:ESV
  • Package / Case:SOT-553
  • Grade:-
  • Qualification:-

Inverter Gates datasheet and documents for TC7SZ00FE,LJ(CT

TC7SZ00FE,LJ(CT

Inverter Gates Overview

The TC7SZ00FE,LJ(CT is a single 2-input NAND gate from Toshiba's L-MOS SHS series, housed in an ESV (SOT-553) surface-mount package. It operates within a supply voltage range of 1.65 V to 5.5 V and features 5.5 V tolerant inputs with power-down protection. The device supports high output currents of ±24 mA at 3.0 V and achieves super-high-speed operation with a typical propagation delay of 2.4 ns at 5.0 V. It complies with AEC-Q100 standards and offers extended temperature ranges.

Inverter Gates Feature Summary

  • Compliant with AEC-Q100 reliability requirements for automotive applications
  • Features 5.5 V tolerant inputs and power-down protection outputs
  • Delivers high output drive capability with ±24 mA minimum current at 3.0 V
  • Provides super-high-speed logic operation with low propagation delay

Inverter Gates Applications

  • Automotive electronic systems requiring AEC-Q100 compliance
  • High-speed digital signal processing circuits
  • Portable devices utilizing low-voltage power supplies
  • Industrial control logic interfacing

Inverter Gates Procurement Notes

Verify the specific ordering suffix to confirm the operating temperature range. Devices ending in J(CT are rated for -40°C to 85°C, while other variants support -40°C to 125°C. Ensure the selected part number matches the thermal requirements of the target application environment before procurement.

Inverter Gates Selection Notes

Select this component when a compact 2-input NAND function is required with robust drive strength and wide voltage compatibility. The ESV package minimizes board space, while the L-MOS technology ensures fast switching speeds suitable for modern digital interfaces. Consider the specific temperature grade based on the suffix to meet environmental constraints.

Inverter Gates Part Context

This device belongs to Toshiba's L-MOS SHS series, designed to match the performance of the TC74LCX series at 3.3 V. It represents a silicon monolithic CMOS digital integrated circuit optimized for speed and power efficiency in portable and automotive electronics.

Inverter Gates Replacement Considerations

The datasheet notes that this device matches the performance of the TC74LCX series when operated at 3.3 V. Designers should verify pinout compatibility and electrical characteristics against TC74LCX equivalents if substituting.

TC7SZ00FE,LJ(CTTC7SZ00FE,LJ(CT
$0.31
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