TK12A80W,S4X

Single FETs, MOSFETs Overview

The TK12A80W,S4X is a single N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and features the DTMOSIV series architecture. The device is housed in a TO-220SIS-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 11.5 A at ambient temperature. The maximum on-resistance (Rds(on)) is 0.45 Ohms at 5.8 A and 10 V gate-source voltage. The gate threshold voltage (Vgs(th)) is typically 2.5 V, with a maximum gate-source voltage (Vgs) of ±20 V. Power dissipation is rated at 45 W (Tc). Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with an 800 V drain-source breakdown rating suitable for demanding power switching applications.
• Low on-resistance characteristic achieved through DTMOSIV technology, optimizing conduction losses.
• Robust thermal performance with a 45 W power dissipation rating in the TO-220SIS package.

Single FETs, MOSFETs Applications

• Switching power supplies
• Motor control circuits
• Inverter systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix S4X to ensure correct packaging and tape-and-reel configuration. Confirm RoHS compliance status via the manufacturer's official documentation before procurement. Cross-reference the specific datasheet revision to validate electrical parameters against your design requirements. Ensure the supplier provides genuine Toshiba Semiconductor and Storage products to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage blocking capability and moderate current handling are required in a through-hole format. Compare Rds(on) values against alternative packages if space constraints allow surface-mount options. Evaluate thermal management needs based on the 45 W dissipation rating and junction-to-case thermal resistance. Consider the gate charge characteristics for driving circuit compatibility in high-frequency switching environments.

Single FETs, MOSFETs Part Context

This component belongs to the DTMOSIV series of power MOSFETs from Toshiba. The series is designed for general-purpose power switching applications requiring high reliability. The TO-220SIS package provides mechanical stability and efficient heat dissipation compared to standard TO-220 variants. It serves as a discrete solution for medium-power electronics where robustness and voltage tolerance are critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 800 V rating, N-channel configuration, and TO-220SIS-3 package. Verify that alternative parts meet or exceed the 11.5 A current rating and 0.45 Ohm on-resistance. Check pinout compatibility to ensure direct replacement without PCB redesign. Consult manufacturer cross-reference lists for validated equivalents.