TK5A60W5,S5VX

$1.76

Description：PB-F POWER MOSFET TRANSISTOR TO-
Series：DTMOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:2d79485bceaa Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK5A60W5,S5VX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is PB-F POWER MOSFET TRANSISTOR TO-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK5A60W5,S5VX

Description：PB-F POWER MOSFET TRANSISTOR TO-
Series：DTMOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：950mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：4.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：370 pF @ 300 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220SIS
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for TK5A60W5,S5VX

TK5A60W5,S5VX

Single FETs, MOSFETs Overview

The TK5A60W5 is a silicon N-channel enhancement-mode MOSFET from Toshiba's DTMOS IV series, housed in a TO-220SIS package. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 4.5 A at 25°C. The device utilizes a Super Junction structure to achieve a typical on-resistance (Rds(on)) of 0.8 Ω at Vgs = 10 V. Key dynamic characteristics include a gate threshold voltage range of 3 to 4.5 V, a total gate charge (Qg) of 11.5 nC, and a reverse recovery time (trr) of 65 ns.

Single FETs, MOSFETs Feature Summary

Super Junction Structure for low on-resistance
Fast reverse recovery time
Easy gate switching control
Enhancement mode operation

Single FETs, MOSFETs Applications

Switching Voltage Regulators

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm environmental compliance status, such as RoHS compatibility. Confirm that the TO-220SIS package dimensions match your PCB footprint requirements. Ensure thermal management design accounts for the specified channel-to-case thermal resistance to maintain safe operating temperatures under load.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage blocking capability with moderate current handling. The low gate charge facilitates efficient driver interface design. Evaluate the Safe Operating Area (SOA) curves to ensure the device can withstand transient loads. Consider the thermal resistance values when designing heatsinking solutions for continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's DTMOS IV family, which employs Super Junction technology to optimize the trade-off between on-resistance and breakdown voltage. The TO-220SIS package provides robust mechanical stability and effective heat dissipation for through-hole mounting, suitable for power conversion circuits.