TK7A50D(STA4,Q,M)

Single FETs, MOSFETs Overview

The TK7A50D(STA4,Q,M) is a silicon N-channel MOSFET from Toshiba's π-MOSⅦ series, designed for switching regulator applications. It features a drain-source voltage (VDSS) of 500 V and a continuous drain current (ID) of 7 A at 25°C. The device has a typical drain-source ON-resistance (RDS(ON)) of 1.0 Ω at VGS = 10 V and ID = 3.5 A. Key electrical characteristics include a gate threshold voltage (Vth) ranging from 2.4 V to 4.4 V, a forward transfer admittance (|Yfs|) of 2.5 S, and a total gate charge (Qg) of 12 nC. Maximum power dissipation is 35 W at Tc = 25°C, with an operating channel temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes π-MOSⅦ technology to achieve low drain-source ON-resistance and high forward transfer admittance.
• Features enhancement mode operation with defined gate threshold voltage ranges for reliable switching control.
• Includes robust avalanche energy ratings supporting repetitive and non-repetitive avalanche conditions.

Single FETs, MOSFETs Applications

• Switching regulators
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix STA4, Q, M against official Toshiba documentation to confirm package type, tape-and-reel specifications, and environmental compliance status such as RoHS compatibility. Confirm thermal resistance values and derating curves match your application's thermal management design requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating and 7 A continuous current capability are required in a TO-220SIS package. Consider the 1.0 Ω RDS(ON) value for conduction loss calculations at moderate currents. Ensure the gate drive voltage supports the specified Vth range for optimal turn-on performance and check that the thermal design accommodates the 35 W dissipation limit at case temperature.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's π-MOSⅦ family of N-channel power MOSFETs. It shares the same package style and general application scope as other devices in the TK series, such as the TK6A50D and TK8A50D, but differs in specific current handling and on-resistance parameters tailored for different power levels within the 500 V class.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 500 V VDSS, 7 A ID, and TO-220SIS package. Verify pinout compatibility and ensure equivalent or superior RDS(ON), Qg, and avalanche energy ratings. Cross-reference with Toshiba's recommended replacement list if available.