TP65H035G4WS

Single FETs, MOSFETs Overview

The TP65H035G4WS is a 650V Cascode GaN FET manufactured by Transphorm, housed in a TO-247-3 through-hole package. It features an N-channel enhancement mode configuration with a maximum continuous drain current of 46.5A at case temperature and a power dissipation rating of 156W. The device exhibits a typical on-resistance of 35 milliohms and a gate charge of 36 nanocoulombs at 10 volts. Operating within a junction temperature range of -55°C to 150°C, it integrates a low-voltage silicon MOSFET with high-voltage GaN HEMT technology.

Single FETs, MOSFETs Feature Summary

• Cascode architecture combining high-voltage GaN HEMT with low-voltage silicon MOSFET for enhanced reliability
• Through-hole TO-247-3 packaging designed for robust thermal management
• Enhancement-mode operation compatible with standard silicon gate drivers
• Low gate charge characteristics supporting high-frequency switching applications

Single FETs, MOSFETs Applications

• AC-DC power supplies
• DC-DC converters
• Solar microinverters
• Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific generation suffix against official Transphorm documentation to confirm manufacturing status and exact electrical tolerances. Confirm package pinout compatibility with existing PCB footprints before integration. Ensure sourcing channels provide authentic components with traceable origin records to maintain circuit integrity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage blocking capability with through-hole mounting constraints. Evaluate thermal resistance requirements against the specified 156W dissipation limit. Consider driver compatibility with the cascode interface when designing control circuits for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the TP65H series of Cascode GaN FETs from Transphorm. These devices utilize proprietary integration of GaN and silicon technologies to offer superior efficiency compared to traditional silicon MOSFETs. The TO-247 form factor targets industrial and consumer power conversion markets needing reliable high-power density solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official Transphorm substitution guides for verified alternatives. Cross-reference electrical parameters such as Vdss, Rds(on), and package dimensions carefully. Do not assume functional equivalence with other GaN brands without validating interface and thermal specifications.