TPN2R503NC,L1Q

$1.11

Description：MOSFET N CH 30V 40A 8TSON-ADV
Series：U-MOSVIII
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:05e3532eae99 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TPN2R503NC,L1Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N CH 30V 40A 8TSON-ADV. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TPN2R503NC,L1Q

Description：MOSFET N CH 30V 40A 8TSON-ADV
Series：U-MOSVIII
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2230 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta), 35W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-TSON Advance (3.1x3.1)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for TPN2R503NC,L1Q

TPN2R503NC,L1Q

Single FETs, MOSFETs Overview

The TPN2R503NC,L1Q is an N-channel silicon MOSFET from Toshiba, utilizing U-MOS technology. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 40A at 25°C ambient temperature. The device is housed in an 8-terminal TSON-ADV surface-mount package. This component is designed for high-efficiency switching applications requiring low on-resistance and robust current handling capabilities within power management circuits.

Single FETs, MOSFETs Feature Summary

N-channel silicon MOSFET construction using advanced U-MOS technology
High continuous drain current capability of 40A
Surface-mount 8-terminal TSON-ADV package design

Single FETs, MOSFETs Applications

Power management switch circuits
DC-DC converter stages
General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix, such as L1Q, against the manufacturer's official datasheet to confirm specific tape-and-reel packaging or marking variations. Ensure that the requested component matches the TSON-ADV package outline dimensions and terminal configuration specified in the official documentation before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with high current capacity is required. The TSON-ADV package offers a compact footprint suitable for space-constrained designs. Confirm thermal performance requirements align with the device's dissipation characteristics in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's TPN series of N-channel MOSFETs. These devices are engineered for power management applications, offering a balance of low on-resistance and high current handling. The series utilizes U-MOS technology to achieve improved switching performance and reliability compared to standard MOSFET structures.