TS13005CK C0G

$0.15

Description：TRANS NPN 400V 3A TO-126
Series：-

SKU:d97fab3816ea Category: Single Bipolar Transistors Brand: Taiwan Semiconductor Corporation

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Product introduction

TS13005CK C0G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 400V 3A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for TS13005CK C0G

Description：TRANS NPN 400V 3A TO-126
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：400 V
Vce Saturation (Max) @ Ib, Ic：1V @ 200mA, 1A
Current - Collector Cutoff (Max)：10µA
DC Current Gain (hFE) (Min) @ Ic, Vce：24 @ 425mA, 2V
Power - Max：-
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for TS13005CK C0G

TS13005CK C0G

Single Bipolar Transistors Overview

The TS13005CK is a high voltage NPN silicon power transistor manufactured by Taiwan Semiconductor Corporation. It is housed in a TO-126 plastic package and designed for high-speed switching applications. Key electrical parameters include a collector-emitter breakdown voltage (BVCEO) of 400 V and a collector-base breakdown voltage (BVCBO) of 700 V. The device supports a continuous collector current (IC) of 3 A and a peak collector current (ICM) of 6 A. Total power dissipation is rated at 20 W at 25°C case temperature, with a maximum junction temperature of +150°C. The emitter-base breakdown voltage (BVEBO) is 9 V.

Single Bipolar Transistors Feature Summary

High switching speed capability
Low base drive requirement
Low spread of dynamic parameters

Single Bipolar Transistors Applications

Ballast lighting
Charger

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix C0G to confirm packaging details, as the datasheet indicates a tube packing format. Ensure compliance requirements such as RoHS Directive 2011/65/EU and WEEE 2002/96/EC are met for your region. Confirm halogen-free status according to IEC 61249-2-21 if required. Check the marking diagram for year and month codes to verify production date and lot information upon receipt.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with fast switching characteristics is needed. The TO-126 package provides adequate thermal performance for moderate power levels up to 20 W. Consider the low base drive requirement for efficient driver circuit design. Ensure the application voltage does not exceed the 400 V collector-emitter rating and that current demands stay within the 3 A continuous limit.

Single Bipolar Transistors Part Context

This part belongs to the family of high voltage NPN transistors used in power electronics. It utilizes planar technology to achieve high switching speeds and reliable operation. The device is intended for industrial and consumer applications requiring robust switching performance under high voltage conditions.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other high voltage NPN transistors in the TO-126 package. Verify matching BVCEO, IC, and switching speed specifications before substitution.