TTC011B,Q(S

Single Bipolar Transistors Overview

The TTC011B is a silicon NPN epitaxial planar bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It is housed in a TO-126N (nicknamed TO-220) three-terminal through-hole package designed for power applications. The device features a minimum collector-emitter breakdown voltage of 230 V, a maximum continuous DC collector current of 1 A, and a typical transition frequency of 100 MHz. It exhibits a low collector output capacitance of 20 pF and a maximum collector power dissipation of 1.5 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• High collector-emitter breakdown voltage capability up to 230 V
• Low collector output capacitance for high-frequency performance
• High transition frequency suitable for audio and RF amplification
• Complementary pairing available with the TTA006B PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• Audio-frequency amplifier stages

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with Toshiba sales representatives as indicated in the datasheet. Confirm that the specific ordering suffix matches the required packaging format. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards defined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling capabilities combined with moderate current switching. The TO-126N package facilitates heat dissipation for power applications. Consider the complementary TTA006B for push-pull configurations. Evaluate thermal management requirements carefully given the 1.5 W power dissipation limit.

Single Bipolar Transistors Part Context

Released in April 2014, the TTC011B belongs to Toshiba's line of silicon NPN epitaxial type bipolar transistors. It serves as the NPN counterpart to the TTA006B PNP transistor, enabling symmetrical circuit designs. The device targets general-purpose power amplification tasks where high voltage isolation and stable gain are required.

Single Bipolar Transistors Replacement Considerations

The TTA006B is documented as the complementary PNP device for symmetrical circuit implementation. No other direct substitute part numbers are confirmed in the official documentation.

Single Bipolar Transistors FAQ

Is the TTC011B intended for use in aerospace or medical equipment?

No. The datasheet explicitly states the product is not intended or warranted for use in equipment requiring extraordinarily high levels of quality and reliability, such as aerospace, medical, or nuclear facilities.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 230 V.

Does the epoxy resin encapsulation provide electrical isolation?

No. Although encapsulated in epoxy resin, the device does not guarantee maximum isolation voltage and should be treated as non-isolated regarding electrical clearance from surrounding parts.